The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2018

Filed:

Dec. 20, 2017
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Hiroaki Yoda, Kawasaki, JP;

Naoharu Shimomura, Meguro, JP;

Yuichi Ohsawa, Yokohama, JP;

Tadaomi Daibou, Yokohama, JP;

Tomoaki Inokuchi, Yokohama, JP;

Satoshi Shirotori, Yokohama, JP;

Altansargai Buyandalai, Kawasaki, JP;

Yuuzo Kamiguchi, Yokohama, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01); G11C 11/15 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 11/1659 (2013.01); G11C 11/1673 (2013.01); H01L 27/224 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); G11C 11/15 (2013.01); G11C 11/16 (2013.01);
Abstract

A magnetic memory according to an embodiment includes: a conductive layer including a first and second terminals; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first and second terminals, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first and second terminals, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first and second terminals in an opposite direction to the first write current.


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