The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2018

Filed:

Feb. 17, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventor:

Makoto Hirano, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G06F 11/07 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0655 (2013.01); G06F 3/0604 (2013.01); G06F 3/0619 (2013.01); G06F 3/0679 (2013.01); G06F 11/073 (2013.01); G06F 11/0751 (2013.01); G06F 11/0793 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/3495 (2013.01);
Abstract

A method of reading a nonvolatile memory device including a plurality of pages coupled to a plurality of word lines and a plurality of bit lines, each of the plurality of pages including a data region storing a data and a flag region storing a flag, includes applying a first read voltage to a selected word line to generate first sensing data and a first sensing flag; applying a second read voltage to the selected word line to generate second sensing data and a second sensing flag, generating determination data by performing a logical operation on the first and second sensing data; determining a shift voltage based on the determination data and the read flag; and applying a third read voltage, based on the shift voltage, to the selected word line to generate a read data.


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