The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2018

Filed:

Apr. 21, 2016
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Keumdong Jung, Yongin-si, KR;

Daecheol Kim, Yongin-si, KR;

Seongyoung Lee, Yongin-si, KR;

Cholho Kim, Yongin-si, KR;

Jihoon Yang, Yongin-si, KR;

Hyunyoung Choi, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1343 (2006.01); G02F 1/1362 (2006.01); G02F 1/1333 (2006.01); G02F 1/1368 (2006.01); H01L 27/12 (2006.01); H01L 29/417 (2006.01); H01L 29/94 (2006.01); H01L 31/10 (2006.01);
U.S. Cl.
CPC ...
G02F 1/136213 (2013.01); G02F 1/1368 (2013.01); G02F 1/133345 (2013.01); G02F 1/134309 (2013.01); H01L 27/1214 (2013.01); H01L 29/417 (2013.01); H01L 29/94 (2013.01); H01L 31/10 (2013.01); G02F 2202/103 (2013.01);
Abstract

A thin-film transistor (TFT) array substrate includes a transistor disposed on a base substrate and a storage capacitor electrically connected to the transistor. The transistor includes a gate electrode, an active layer electrically insulated from the gate electrode, the active layer including a semiconductor material, and a first electrode and a second electrode disposed to be spaced apart from each other on the active layer. The storage capacitor includes a lower electrode including a light inflow path, and an upper electrode disposed to face the lower electrode and electrically connected to the second electrode.


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