The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Dec. 27, 2017
Inphi Corporation, Santa Clara, CA (US);
Liang Ding, Singapore, SG;
Radhakrishnan L. Nagarajan, Santa Clara, CA (US);
INPHI CORPORATION, Santa Clara, CA (US);
Abstract
An silicon photonics device of hybrid waveguides having a coupling interlayer with an accurately controlled thickness and a method of making the same. The device includes a first plurality of Si waveguides formed in a SOI substrate and a first layer of SiOoverlying the first plurality of Si waveguides and a second plurality of SiNwaveguides formed on the first layer of SiO. At least one SiNwaveguide is disposed partially overlapping with at least one of the first plurality Si waveguides in vertical direction separated by the first layer of SiOwith a thickness controlled no greater than 90 nm. The device includes a second layer of SiOoverlying the second plurality of SiNwaveguides. The method of accurately controlling the coupling interlayer SiOthickness includes a multilayer SiO/SiN/SiOhard mask process for SiOetching and polishing as stopping and buffering layer as well as Si waveguide etching mask.