The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Jul. 11, 2016
Radiation Detection Technologies, Inc., Manhattan, KS (US);
Steven L. Bellinger, Manhattan, KS (US);
Ryan G. Fronk, Manhattan, KS (US);
Douglas S. McGregor, Riley, KS (US);
Other;
Abstract
A semiconductor neutron detector and a semiconductor process is provided to manufacture a semiconductor neutron detector. First, a substrate with flat surface having a dielectric layer is formed thereon is provided. Thereafter, a masking pattern is applied and etched into the dielectric layer to expose semiconductor features on opposite sides of the substrate. The semiconductor substrate is submerged into an etchant composed of a semiconductor etching solution to etch deep cavities into the substrate in the exposed regions. Afterwards, dopant impurities are introduced and are driven into the semiconductor, under high temperature, into opposite sides of the etched features to produce one or more rectifying junctions. Afterwards, LiF and/or B particles are forced into the cavities through high velocity methods.