The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2018

Filed:

Dec. 22, 2017
Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

Ye Seul Kim, Ansan-si, KR;

Kyoung Wan Kim, Ansan-si, KR;

Sang Won Woo, Ansan-si, KR;

Ji Hye Kim, Ansan-si, KR;

Assignee:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
F21K 9/232 (2016.01); G06F 1/16 (2006.01); H01L 25/075 (2006.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/42 (2010.01); H01L 33/46 (2010.01); H01L 33/62 (2010.01); H05K 1/18 (2006.01); H01L 33/38 (2010.01); F21Y 107/70 (2016.01);
U.S. Cl.
CPC ...
F21K 9/232 (2016.08); G06F 1/1662 (2013.01); H01L 25/0753 (2013.01); H01L 33/0033 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 33/382 (2013.01); H01L 33/42 (2013.01); H01L 33/46 (2013.01); H01L 33/62 (2013.01); H05K 1/189 (2013.01); F21Y 2107/70 (2016.08); H01L 2224/73204 (2013.01); H05K 2201/10106 (2013.01);
Abstract

A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; at least one groove disposed on a side surface of the mesa forming a concave region; an extension electrode forming ohmic contact with the first conductive type semiconductor layer in the concave region; an insulation layer covering the extension electrode, the first conductive type semiconductor layer, and the mesa, and including at least one first opening exposing the extension electrode and a second opening; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening.


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