The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Oct. 12, 2015
Applicant:
United Technologies Corporation, Hartford, CT (US);
Inventors:
James W. Neal, Ellington, CT (US);
Michael J. Maloney, Marlborough, CT (US);
Kevin W. Schlichting, South Glastonbury, CT (US);
Eric Jorzik, Danbury, CT (US);
David A. Litton, West Hartford, CT (US);
Brian T. Hazel, Avon, CT (US);
Assignee:
UNITED TECHNOLOGIES CORPORATION, Farmington, CT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/24 (2006.01); C23C 14/30 (2006.01); C23C 14/08 (2006.01); F01D 25/00 (2006.01); F01D 25/28 (2006.01); C23C 14/00 (2006.01); F01D 5/28 (2006.01);
U.S. Cl.
CPC ...
C23C 14/30 (2013.01); C23C 14/0021 (2013.01); C23C 14/083 (2013.01); F01D 25/005 (2013.01); F01D 25/28 (2013.01); F01D 5/288 (2013.01); F05D 2230/31 (2013.01); F05D 2300/611 (2013.01);
Abstract
A method includes forming a multi-layered ceramic barrier coating under a chamber pressure of greater than 1 Pascals. In the method, low- and high-dopant ceramic materials are evaporated using input evaporating energies that fall, respectively, above and below a threshold for depositing the materials in a columnar microstructure (low-dopant) and in a branched columnar microstructure (high-dopant).