The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2018

Filed:

Mar. 17, 2016
Applicant:

Korea Institute of Science and Technology, Seoul, KR;

Inventors:

Sang Whan Park, Seoul, KR;

Mi Rae Youm, Seoul, KR;

Sung Il Youn, Seoul, KR;

Gyoung Sun Cho, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 21/06 (2006.01); C01B 31/36 (2006.01);
U.S. Cl.
CPC ...
C01B 31/36 (2013.01); C01P 2004/51 (2013.01); C01P 2004/60 (2013.01);
Abstract

The present invention relates to a method for preparing an ultrahigh-purity silicon carbide powder, more particularly to a method for preparing an ultrahigh-purity silicon carbide granular powder by preparing a gel wherein a silicon compound and a carbon compound are uniformly dispersed via a sol-gel process using a liquid state silicon compound and a solid or liquid state carbon compound of varying purities as raw materials, preparing a silicon dioxide-carbon (SiO—C) composite by pyrolyzing the prepared gel, preparing a silicon carbide-silicon dioxide-carbon (SiC—SiO—C) composite powder via two-step carbothermal reduction of the prepared silicon dioxide-carbon composite, adding a silicon metal and then conducting carbonization and carbothermal reduction at the same time by heat treating, thereby growing the synthesized silicon carbide particle with an increased yield of the silicon carbide.


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