The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Nov. 13, 2017
Applicant:
Ihi Ionbond Ag, Olten, CH;
Inventors:
Maria Pettersson, Uppsala, SE;
Håkan Engqvist, Östhammar, SE;
Johanna André, Uppsala, SE;
Lars Hultman, Linköping, SE;
Assignee:
IHI Ionbond AG, , CH;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
A61F 2/28 (2006.01); A61F 2/30 (2006.01); A61F 2/32 (2006.01); A61F 2/34 (2006.01); A61F 2/36 (2006.01); A61F 2/38 (2006.01); A61F 2/40 (2006.01); A61L 27/30 (2006.01); A61L 27/04 (2006.01); A61L 27/06 (2006.01); A61L 27/10 (2006.01); A61L 27/16 (2006.01); A61L 31/02 (2006.01); A61L 31/04 (2006.01); A61L 31/08 (2006.01); A61L 27/50 (2006.01); A61L 27/28 (2006.01);
U.S. Cl.
CPC ...
A61L 27/306 (2013.01); A61F 2/3094 (2013.01); A61F 2/30767 (2013.01); A61L 27/042 (2013.01); A61L 27/045 (2013.01); A61L 27/06 (2013.01); A61L 27/10 (2013.01); A61L 27/16 (2013.01); A61L 27/303 (2013.01); A61L 27/50 (2013.01); A61L 31/022 (2013.01); A61L 31/026 (2013.01); A61L 31/048 (2013.01); A61L 31/084 (2013.01); A61L 31/088 (2013.01); H05K 999/99 (2013.01); A61F 2002/3098 (2013.01); A61F 2310/00317 (2013.01); A61F 2310/00874 (2013.01); A61L 27/28 (2013.01); A61L 2400/10 (2013.01); A61L 2400/12 (2013.01); A61L 2420/02 (2013.01); A61L 2420/08 (2013.01); A61L 2430/12 (2013.01); A61L 2430/24 (2013.01);
Abstract
An implant comprises a substrate and a coating on a surface of the substrate, and the coating includes silicon nitride and has a thickness of from about 1 to about 15 micrometer wherein the silicon nitride coating has a composition defined by SiNW, where W is C, H and/or O, 2<x<4, 3<y<5, and z is such that the coating contains less than 20 atomic percent of C, H and O.