The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Apr. 25, 2016
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventor:
Derek Bernardon, Villach, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/082 (2006.01); H01L 27/06 (2006.01); H01L 23/34 (2006.01); H01L 27/02 (2006.01); H02M 1/32 (2007.01); H01L 29/78 (2006.01); H03K 17/08 (2006.01);
U.S. Cl.
CPC ...
H03K 17/0822 (2013.01); H01L 23/34 (2013.01); H01L 27/0207 (2013.01); H01L 27/0617 (2013.01); H02M 1/32 (2013.01); H01L 29/78 (2013.01); H01L 29/7801 (2013.01); H02M 2001/327 (2013.01); H03K 2017/0806 (2013.01); H03K 2217/0027 (2013.01);
Abstract
A parameter is compared to a lower threshold. The parameter is a gate-to-source voltage that is associated with a first transistor or a drain current that is associated with the first transistor. The first transistor is a field effect transistor, and the first transistor is a power device. If one or more of at least one supplemental transistor is coupled to the first transistor, and the parameter is less than the lower threshold, a plurality of switches is controlled to decouple at least one of the at least one supplemental transistor from the first transistor.