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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10103696 B1

PDFFull Text
Date of Patent:
Oct. 16, 2018

Filed:

Apr. 13, 2017

Integrated gallium nitride power amplifier and switch

Applicant:

Tagore Technology, Inc., Arlington Heights, IL (US);

Inventor:

James E. Mitzlaff, Arlington Heights, IL (US);

Assignee:

Tagore Technology, Inc., Arlington Heights, IL (US);

Attorney:

Fleit Gibbons Gutman Bongini Bianco PL

Primary Examiner:

Khanh V Nguyen

Assistant Examiner:

Khiem Nguyen

Int. Cl.
CPC ...
H03F 3/16 (2006.01); H03F 3/213 (2006.01); H03F 3/195 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 49/02 (2006.01); H01L 23/522 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 27/02 (2006.01); H01L 29/205 (2006.01); H01L 23/66 (2006.01);
U.S. Cl.
CPC ...
H03F 3/213 (2013.01); H01L 23/5223 (2013.01); H01L 23/66 (2013.01); H01L 27/0207 (2013.01); H01L 27/0605 (2013.01); H01L 27/0629 (2013.01); H01L 28/20 (2013.01); H01L 28/40 (2013.01); H01L 29/0696 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/7787 (2013.01); H03F 3/195 (2013.01); H01L 2223/665 (2013.01); H01L 2223/6655 (2013.01); H03F 2200/171 (2013.01); H03F 2200/21 (2013.01); H03F 2200/267 (2013.01); H03F 2200/387 (2013.01); H03F 2200/414 (2013.01); H03F 2200/429 (2013.01); H03F 2200/451 (2013.01);
Abstract

A multi-band RF power amplifier circuit fabricated using GaN technology includes a RF power amplifier coupled to a multi-band RF switch without an intervening impedance matching network between the RF power amplifier and the multi-band RF switch. The multi-band RF switch includes a plurality of Unit HEMT cells. In one IC package, the RF power amplifier, the multi-band RF switch, a controller for controlling the switch and all connection therebetween are totally contained within the IC package. In another IC package, the RF power amplifier and the multi-band RF switch are disposed on a single substrate.

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