The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2018

Filed:

Jun. 03, 2013
Applicant:

Nec Corporation, Tokyo, JP;

Inventors:

Naoki Banno, Tokyo, JP;

Munehiro Tada, Tokyo, JP;

Toshitsugu Sakamoto, Tokyo, JP;

Assignee:

NEC CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 45/085 (2013.01); H01L 45/1206 (2013.01); H01L 45/1233 (2013.01); H01L 45/14 (2013.01); H01L 45/146 (2013.01); H01L 45/16 (2013.01); H01L 45/1616 (2013.01); H01L 45/1675 (2013.01);
Abstract

The present invention provides a non-volatile switching element that can be applied to a programmable-logic wiring changeover switch and in which an electrochemical reaction is used. Of the two electrodes for applying a bias voltage to the variable resistance layer of the non-volatile switching element, the electrode that does not feed metal ions to the variable resistance layer when the switch is in the ON state is made from a ruthenium alloy. The ruthenium alloy includes ruthenium and a metal in which the standard Gibbs energy of forming ΔG when metal ions are generated from the metal is higher in the negative direction than ΔG of ruthenium. As a result, it becomes possible to maintain the low-resistance state in the ON state for a longer period of time without increasing the amount of electrical current required when a switch is made between the ON state and the OFF state.


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