The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2018

Filed:

Sep. 08, 2016
Applicants:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Tohoku University, Sendai-shi, JP;

Inventors:

Yushi Kato, Chofu, JP;

Tadaomi Daibou, Yokohama, JP;

Qinli Ma, Sendai, JP;

Atsushi Sugihara, Sendai, JP;

Shigemi Mizukami, Sendai, JP;

Terunobu Miyazaki, Sendai, JP;

Assignees:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

TOHOKU UNIVERSITY, Sendai-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01L 43/02 (2006.01); H01F 10/32 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H01F 10/3295 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01); H01F 10/3254 (2013.01); H01F 10/3286 (2013.01);
Abstract

A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer containing Mn and at least one of Ge, Ga, or Al, and the third magnetic layer containing MnVZ, where V represents vanadium, and Z represents at least one element of Al or Ga.


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