The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2018

Filed:

May. 03, 2017
Applicant:

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;

Inventors:

Hiroyuki Suto, Numazu, JP;

Hidenari Yamamoto, Gotemba, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/32 (2006.01); H01L 35/20 (2006.01); H01L 35/22 (2006.01); H01L 35/30 (2006.01);
U.S. Cl.
CPC ...
H01L 35/32 (2013.01); H01L 35/20 (2013.01); H01L 35/22 (2013.01); H01L 35/30 (2013.01);
Abstract

A thermoelectric conversion device including an n-type thermoelectric converter, a p-type thermoelectric converter, a high temperature-side electrode with which one end of the n-type thermoelectric converter and one end of the p-type thermoelectric converter are put into contact, a first low temperature-side electrode in contact with another end of the n-type thermoelectric converter, and a second low temperature-side electrode in contact with another end of the p-type thermoelectric converter, wherein in the n-type thermoelectric converter, the side in contact with the high temperature-side electrode is composed of a carrier generation semiconductor containing MgSn, and in the n-type thermoelectric converter, the side in contact with the first low temperature-side electrode is composed of a carrier transfer semiconductor containing MgSiSn, wherein 0.6≤x≤0.7, and a first n-type dopant.


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