The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2018

Filed:

Jun. 08, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Hanul Yoo, Bucheon-si, KR;

Yong Il Kim, Seoul, KR;

Sung Hyun Sim, Uiwang-si, KR;

Wan Tae Lim, Suwon-si, KR;

Hye Seok Noh, Suwon-si, KR;

Ji Hye Yeon, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/58 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/22 (2010.01); H01L 33/12 (2010.01); H01L 33/50 (2010.01); H01L 33/40 (2010.01); H01L 33/00 (2010.01); F21K 9/235 (2016.01); F21V 29/76 (2015.01); F21K 9/238 (2016.01); F21K 9/232 (2016.01);
U.S. Cl.
CPC ...
H01L 33/58 (2013.01); H01L 33/007 (2013.01); H01L 33/0079 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01); H01L 33/405 (2013.01); H01L 33/502 (2013.01); F21K 9/232 (2016.08); F21K 9/235 (2016.08); F21K 9/238 (2016.08); F21V 29/76 (2015.01); H01L 2933/0016 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0058 (2013.01);
Abstract

A semiconductor light emitting device includes a light-transmissive support having a first surface including a first region and a second region surrounding the first region, and a second surface opposing the first surface, and including a wavelength conversion material, a semiconductor stack disposed above the first region of the first surface of the light-transmissive support, and including first and second conductivity-type semiconductor layers and an active layer disposed therebetween, a light-transmitting bonding layer disposed between the light-transmissive support and the semiconductor stack, a light blocking film disposed above the second region of the light-transmissive support to surround the semiconductor stack, and first and second electrodes respectively disposed on portions of the first and second conductivity-type semiconductor layers.


Find Patent Forward Citations

Loading…