The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2018

Filed:

May. 26, 2017
Applicant:

Azur Space Solar Power Gmbh, Heilbronn, DE;

Inventors:

Daniel Fuhrmann, Heilbronn, DE;

Thomas Lauermann, Heilbronn, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/00 (2006.01); H01L 33/14 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/08 (2010.01); H01L 33/30 (2010.01); H01L 33/40 (2010.01); H01L 33/62 (2010.01); H01L 33/04 (2010.01); H01L 33/02 (2010.01);
U.S. Cl.
CPC ...
H01L 33/14 (2013.01); H01L 33/0033 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01L 33/08 (2013.01); H01L 33/30 (2013.01); H01L 33/305 (2013.01); H01L 33/405 (2013.01); H01L 33/62 (2013.01); H01L 33/02 (2013.01);
Abstract

A light-emitting diode having a stack-like structure, whereby the stack-like structure comprises a substrate layer and a mirror layer and an n-doped bottom cladding layer and an active layer, producing electromagnetic radiation, and a p-doped top cladding layer and an n-doped current spreading layer, and the aforementioned layers are arranged in the indicated sequence. The active layer comprises a quantum well structure. A tunnel diode is situated between the top cladding layer and the current spreading layer, whereby the current spreading layer is formed predominantly of an n-doped Ga-containing layer, having a Ga content >1%.


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