The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Sep. 13, 2017
Applicant:
Nano and Advanced Materials Institute Limited, Hong Kong, HK;
Inventors:
Assignee:
Nano and Advanced Materials Institute Limited, Hong Kong, HK;
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0236 (2006.01); H01L 33/22 (2010.01); H01L 33/06 (2010.01); H01L 33/42 (2010.01); H01L 21/02 (2006.01); H01L 31/18 (2006.01); H01L 31/0725 (2012.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 31/02366 (2013.01); H01L 21/02554 (2013.01); H01L 21/02631 (2013.01); H01L 31/0725 (2013.01); H01L 31/1888 (2013.01); H01L 33/06 (2013.01); H01L 33/22 (2013.01); H01L 33/42 (2013.01); H01L 33/32 (2013.01); H01L 2933/0016 (2013.01);
Abstract
The present invention provides transparent semiconducting films for constructing a translucent electrode that possess a high transparency and low sheet resistance. Further, the transparent semiconducting films have a high light diffusion property, which is capable to be a translucent front/back electrode in a light-emitting device for improving the light emission efficiency and a front/intermediate/back electrode in a multi-junction solar cell for improving the light trapping effect. Related fabrication method and how they are applied in different fields are also provided in the present invention.