The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Aug. 29, 2012
Salvatore Lombardo, Catania, IT;
Cosimo Gerardi, Motta S. Anastasia, IT;
Sebastiano Ravesi, Catania, IT;
Marina Foti, Catania, IT;
Cristina Tringali, Catania, IT;
Stella Loverso, Catania, IT;
Nicola Costa, Catania, IT;
Salvatore Lombardo, Catania, IT;
Cosimo Gerardi, Motta S. Anastasia, IT;
Sebastiano Ravesi, Catania, IT;
Marina Foti, Catania, IT;
Cristina Tringali, Catania, IT;
Stella Loverso, Catania, IT;
Nicola Costa, Catania, IT;
STMICROELECTRONICS S.R.L., Agrate Brianza, IT;
Abstract
A thin film amorphous silicon solar cell may have front contact between a hydrogenated amorphous silicon layer and a transparent conductive oxide layer. The cell may include a layer of a refractory metal, chosen among the group composed of molybdenum, tungsten, tantalum and titanium, of thickness adapted to ensure a light transmittance of at least 80%, interposed therebetween, before growing by PECVD a hydrogenated amorphous silicon p-i-n light absorption layer over it. A refractory metal layer of just about 1 nm thickness may effectively shield the oxide from the reactive plasma, thereby preventing a diffused defect when forming the p.i.n. layer that would favor recombination of light-generated charge carriers.