The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2018

Filed:

Apr. 13, 2017
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

John J. Ellis-Monaghan, Grand Isle, VT (US);

Edward W. Kiewra, South Burlington, VT (US);

Jason S. Orcutt, Katonah, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/02 (2006.01); H01L 31/0232 (2014.01); G02B 6/42 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02327 (2013.01); G02B 6/4295 (2013.01); G02B 2006/12061 (2013.01);
Abstract

Photodetector including: a waveguide of a waveguide material extending over a substrate; an insulating layer formed over the waveguide and having an opening exposing the waveguide; a photodetector layer formed over the insulating layer and into the opening so as to make contact with the waveguide, the photodetector layer having a first end at the opening and a second end distal from the opening, the photodetector layer being a gradient material of the waveguide material and germanium wherein a waveguide material portion of the gradient material varies from a maximum at the first end to a minimum at the second end and wherein a germanium portion of the gradient material varies from a minimum at the first end to a maximum at the second end; a photodetector region at the second end; and a photodetector layer extension extending at an angle from the photodetector layer at the second end.


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