The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Jul. 13, 2017
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Shunpei Yamazaki, Setagaya, JP;
Masashi Tsubuku, Atsugi, JP;
Kengo Akimoto, Atsugi, JP;
Hiroki Ohara, Sagamihara, JP;
Tatsuya Honda, Nigata, JP;
Takatsugu Omata, Isehara, JP;
Yusuke Nonaka, Atsugi, JP;
Masahiro Takahashi, Atsugi, JP;
Akiharu Miyanaga, Tochigi, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A method comprising a step of forming an oxide semiconductor film over a substrate by a sputtering method while heating the substrate at a temperature of higher than 200° C. and lower than or equal to 400° C. is provided. The oxide semiconductor film comprises a crystalline region and is in a non-single-crystal state. The step of forming the oxide semiconductor film is performed by using a sputtering target comprising indium, gallium, zinc and oxygen and a sputtering gas comprising at least one of a rare gas and oxygen.