The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Apr. 19, 2016
Mitsubishi Electric Corporation, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A thin film transistor substrate includes: a plurality of pixels arranged in a matrix, each of the pixels including: a thin film transistor including: a gate electrode made of a metal and disposed on the substrate; a gate insulating film covering at least the gate electrode; a semiconductor layer including an oxide semiconductor provided at a position facing the gate electrode with the gate insulating film interposed therebetween; a source electrode and a drain electrode in contact with the semiconductor layer; and an interlayer insulating film provided on at least the semiconductor layer, the source electrode, and the drain electrode; and a pixel electrode electrically connected to the drain electrode. The gate electrode has hydrogen occlusion capability of 2.5×10to 2×10atoms/cm, and the semiconductor layer has a hydrogen concentration of 1×10atoms/cmor less.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile