The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Apr. 20, 2015
Sung-min Kim, Incheon, KR;
Kyung-seok OH, Seoul, KR;
Cheol Kim, Hwaseong-si, KR;
Heon-jong Shin, Yongin-si, KR;
Jong-ryeol Yoo, Osan-si, KR;
Hyun-jung Lee, Suwon-si, KR;
Seong-hoon Jeong, Seongnam-si, KR;
Sung-Min Kim, Incheon, KR;
Kyung-Seok Oh, Seoul, KR;
Cheol Kim, Hwaseong-si, KR;
Heon-Jong Shin, Yongin-si, KR;
Jong-Ryeol Yoo, Osan-si, KR;
Hyun-Jung Lee, Suwon-si, KR;
Seong-Hoon Jeong, Seongnam-si, KR;
Abstract
Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.