The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
May. 01, 2017
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Abstract
A semiconductor device, including a first groove, a second groove and a first impurity region provided on a semiconductor substrate, a second impurity region provided in the first impurity region, a gate electrode provided in the first groove, a first insulating film provided between the first groove and the gate electrode, a second insulating film provided in the second groove, and a third insulating film provided astride tops of the first groove and the second groove. Each of the first and second insulating films has a lower half portion that is thicker than an upper half portion thereof. The lower half portions of the first and second insulating films are connected. The gate electrode has first and second portions thereof respectively contacting the lower and upper half portions of the first insulating film, a width of the first portion being narrower than a width of the second portion.