The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Aug. 25, 2017
Applicant:
Osaka University, Osaka, JP;
Inventors:
Heiji Watanabe, Suita, JP;
Takahiro Yamada, Suita, JP;
Mikito Nozaki, Suita, JP;
Takuji Hosoi, Suita, JP;
Takayoshi Shimura, Suita, JP;
Assignee:
OSAKA UNIVERSITY, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/40 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 29/20 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/408 (2013.01); H01L 21/0254 (2013.01); H01L 21/02241 (2013.01); H01L 21/02389 (2013.01); H01L 21/02483 (2013.01); H01L 21/28008 (2013.01); H01L 21/28575 (2013.01); H01L 29/2003 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01);
Abstract
A semiconductor device () includes a base layer (), an interface layer (), and a deposition layer (). The base layer () includes a nitride semiconductor that contains gallium. The interface layer () is adjacent to the base layer (). The interface layer () contains gallium oxide. The deposition layer () is adjacent to the interface layer (). The deposition layer () has a wider band gap than the interface layer (). The interface layer () preferably has crystallinity. The interface layer () preferably contains α-phase GaO.