The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Feb. 22, 2017
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Masahiro Koyama, Kawasaki, JP;
Hisashi Saito, Yokohama, JP;
Tatsuo Shimizu, Shinagawa, JP;
Shinya Nunoue, Ichikawa, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
According to one embodiment, a semiconductor device includes a first element portion. The first element portion includes first and second semiconductor layers, first, second and third electrodes, and a first insulating layer. The first semiconductor layer includes AlGaN (0≤x1<1). The first electrode is separated from the first semiconductor layer. The first electrode includes a polycrystal of a nitride of one of Al or B. The second semiconductor layer includes AlGaN (x1<x2<1). The second semiconductor layer includes first to third regions. The first region is positioned between the second and third regions. The first region is provided between the first semiconductor layer and the first electrode. The first insulating layer is provided between the first region and the first electrode. The second electrode is electrically connected to the second region. The third electrode is electrically connected to the third region.