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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10103221 B1

PDFFull Text
Date of Patent:
Oct. 16, 2018

Filed:

May. 18, 2017

Power semiconductor device

Applicant:

Magnachip Semiconductor, Ltd., Cheongju-si, KR;

Inventors:

In Su Kim, Cheongju-si, KR;

Jeong Hwan Park, Gumi-si, KR;

Seung Sik Park, Gumi-si, KR;

Ha Yong Yang, Cheongju-si, KR;

Assignee:

Magnachip Semiconductor, Ltd., Cheongju-si, KR;

Attorney:

NSIP Law

Primary Examiner:

Marcos D Pizarro

Assistant Examiner:

Lawrence Tynes, Jr

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/739 (2006.01); H01L 29/423 (2006.01); H01L 23/528 (2006.01); H01L 29/40 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 23/528 (2013.01); H01L 29/402 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01); H01L 29/4238 (2013.01); H01L 29/7397 (2013.01); H01L 29/1095 (2013.01);
Abstract

The present examples relate to a power semiconductor device. The present examples also relate to a power semiconductor device that maintains a breakdown voltage and reduces a gate capacitance through improving the structure of an Injection Enhanced Gate Transistor (IEGT), and thereby reduces strength of an electric field compared to alternative technologies. Accordingly, the present examples provide a power semiconductor device with a small energy consumption and with an improved switching functionality.

Find Patent Forward Citations

Kim, In. (2018). Power semiconductor device (U.S. Patent No. 10103221). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10103221

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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