The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Aug. 04, 2017
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Inventors:
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/32 (2006.01); H01L 21/768 (2006.01); H01L 33/00 (2010.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3258 (2013.01); H01L 21/7684 (2013.01); H01L 21/76841 (2013.01); H01L 27/12 (2013.01); H01L 27/1214 (2013.01); H01L 27/1248 (2013.01); H01L 27/1251 (2013.01); H01L 27/1255 (2013.01); H01L 27/3244 (2013.01); H01L 27/3246 (2013.01); H01L 27/3248 (2013.01); H01L 33/0041 (2013.01); H01L 51/5253 (2013.01); H01L 51/5221 (2013.01); H01L 2227/323 (2013.01); H01L 2924/0002 (2013.01);
Abstract
In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.