The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2018

Filed:

Oct. 16, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Byong-hyun Jang, Suwon-si, KR;

Dongchul Yoo, Seongnam-si, KR;

Woojin Jang, Suwon-si, KR;

Jaeyoung Ahn, Seongnam-si, KR;

Junkyu Yang, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 23/528 (2006.01); H01L 29/51 (2006.01); H01L 27/11568 (2017.01); H01L 21/311 (2006.01); H01L 21/28 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 27/11565 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/28282 (2013.01); H01L 21/31111 (2013.01); H01L 21/76224 (2013.01); H01L 23/528 (2013.01); H01L 27/11568 (2013.01); H01L 29/0649 (2013.01); H01L 29/1037 (2013.01); H01L 29/513 (2013.01); H01L 27/11565 (2013.01); H01L 29/518 (2013.01);
Abstract

A semiconductor device includes word lines vertically stacked on top of each other on a substrate, insulating patterns between the word lines, a vertical pillar connected to the substrate, and residual sacrificial patterns on the substrate at sides of the word lines. The vertical pillar penetrates the word lines and the insulating patterns. Each of the insulating patterns includes a first portion between the word lines and a second portion extending from the first portion and between the residual sacrificial patterns. A first thickness of the first portion is smaller than a second thickness of the second portion.


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