The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2018

Filed:

Jun. 27, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Ji Hoon Kim, Gwacheon-si, KR;

Eun Tae Kim, Seoul, KR;

Seong Hun Park, Hwaseong-si, KR;

Youn Jae Cho, Anyang-si, KR;

Hee Sook Park, Hwaseong-si, KR;

Woong Hee Sohn, Seoul, KR;

Jin Ho Oh, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/8242 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10876 (2013.01); H01L 27/10814 (2013.01); H01L 27/10823 (2013.01); H01L 29/4236 (2013.01); H01L 27/10855 (2013.01); H01L 27/10891 (2013.01);
Abstract

A Semiconductor device and method for fabricating the same are provided. The method includes forming a trench in a substrate, forming a lower gate metal using a first gas, the lower gate metal burying at least a portion of the trench, forming a barrier metal on the lower gate metal, on the barrier metal, forming an upper gate metal using a second gas different from the first gas and forming a capping film on the gate metal, the capping film filling the trench.


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