The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2018

Filed:

Jan. 11, 2018
Applicant:

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi, JP;

Inventors:

Satoshi Takahagi, Nagakute, JP;

Syou Funano, Toyota, JP;

Takuya Kadoguchi, Toyota, JP;

Yuji Hanaki, Nagoya, JP;

Shingo Iwasaki, Toyota, JP;

Takanori Kawashima, Anjyou, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/498 (2006.01); H01L 23/367 (2006.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49582 (2013.01); H01L 21/48 (2013.01); H01L 21/56 (2013.01); H01L 23/367 (2013.01); H01L 23/495 (2013.01); H01L 23/498 (2013.01); H01L 23/49513 (2013.01); H01L 23/49524 (2013.01); H01L 23/49551 (2013.01); H01L 23/49562 (2013.01); H01L 23/49568 (2013.01); H01L 23/49575 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/83 (2013.01); H01L 29/7395 (2013.01); H01L 29/861 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/3303 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/33505 (2013.01); H01L 2224/83211 (2013.01); H01L 2224/83986 (2013.01);
Abstract

A semiconductor device may include: a first and a second semiconductor elements each including electrodes on both surfaces thereof; a first and a second metal plates which interpose the first semiconductor element, the metal plates respectively being bonded to the first semiconductor element via first soldered portions; and a third and a fourth metal plates which interpose the second semiconductor element, the metal plates respectively being bonded to the second semiconductor element via second soldered portions; wherein a first joint is provided at the first metal plate, a second joint is provided at the fourth metal plate, the joints are bonded via a third soldered portion, and a solidifying point of the first soldered portions is higher than a solidifying point of the third soldered portion, and a solidifying point of the second soldered portions is higher than the solidifying point of the third soldered portion.


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