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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10103051 B1

PDFFull Text
Date of Patent:
Oct. 16, 2018

Filed:

May. 24, 2017

Semiconductor structure having an isolation layer for reducing parasitic effect

Applicant:

Richwave Technology Corp., Taipei, TW;

Inventors:

Chih-Sheng Chen, Taipei, TW;

Jhao-Yi Lin, Taipei, TW;

Assignee:

RichWave Technology Corp., Taipei, TW;

Attorney:

Winston Hsu

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Valerie N Newton

Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 21/765 (2006.01); H01L 27/082 (2006.01); H01L 27/092 (2006.01); H01L 29/735 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/765 (2013.01); H01L 29/0619 (2013.01); H01L 27/082 (2013.01); H01L 27/0928 (2013.01); H01L 29/735 (2013.01);
Abstract

A semiconductor structure includes a first well, a semiconductor element, a second well and a first isolation layer. The semiconductor element is formed on or contacts the first well. The first well is formed on the second well. The first isolation layer is used to reduce a parasitic effect between the first well and the second well. The bottom of the first isolation layer is at least as deep as the bottom of the first well. The first isolation layer substantially forms a first ring structure around the first well. The doping type of the second well is different from the doping type of the first well.

Find Patent Forward Citations

Chen, Chih-Sheng. (2018). Semiconductor structure having an isolation layer for reducing parasitic effect (U.S. Patent No. 10103051). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10103051

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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