The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Aug. 03, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Sun-min Moon, Yongin-si, KR;
Youn-soo Kim, Yongin-si, KR;
Han-jin Lim, Seoul, KR;
Yong-jae Lee, Incheon, KR;
Se-hoon Oh, Hwaseong-si, KR;
Hyun-jun Kim, Seoul, KR;
Jin-sun Lee, Seongnam-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonngi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/40 (2006.01); C23C 16/04 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28008 (2013.01); C23C 16/045 (2013.01); C23C 16/405 (2013.01); C23C 16/45534 (2013.01); H01L 29/401 (2013.01);
Abstract
A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.