The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Oct. 12, 2016
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Satomi Kajiwara, Matsumoto, JP;
Shin'ichi Nakamata, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Abstract
With a semiconductor device fabrication method, an oxide film and a thermal oxide film formed over a semiconductor substrate are etched and ions are implanted in the semiconductor substrate in a high-temperature environment with the etched oxide film as a mask. Furthermore, the thermal oxide film has high adhesion to the semiconductor substrate. As a result, even if a difference in linear expansion coefficient arises between the semiconductor substrate and the oxide film due to a change in the linear expansion coefficient of the semiconductor substrate, the oxide film does not peel off the semiconductor substrate or crack because the oxide film is formed over the semiconductor substrate with the thermal oxide film therebetween.