The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2018

Filed:

Apr. 11, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventors:

Sang-Won Park, Seoul, KR;

Su-Chang Jeon, Seoul, KR;

Dong-Kyo Shim, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/26 (2013.01); G11C 16/3459 (2013.01);
Abstract

A nonvolatile memory device includes a cell string having a plurality of memory cells connected to one bit line. A page buffer is connected to the bit line via a sensing node and connected to the cell string via the bit line. The page buffer includes a first latch for storing bit line setup information and a second latch for storing forcing information. The first latch is configured to output the bit line setup information to the sensing node, and the second latch is configured to output the forcing information to the sensing node independently of the first latch.


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