The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2018

Filed:

Aug. 25, 2017
Applicants:

Headway Technologies, Inc., Milpitas, CA (US);

Ibm Corporation, Yorktown Heights, NY (US);

Inventors:

Guenole Jan, San Jose, CA (US);

Po-Kang Wang, Los Altos, CA (US);

John De Brosse, Colchester, VT (US);

Yuan-Jen Lee, Fremont, CA (US);

Assignee:

Headway Technologies, Inc., Milpitas, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/15 (2006.01); G11C 11/16 (2006.01); G11C 29/44 (2006.01); G11C 17/02 (2006.01); G11C 11/417 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 11/417 (2013.01); G11C 17/02 (2013.01); G11C 29/44 (2013.01);
Abstract

A circuit and method for adaptive trimming of the reference signal for sensing data during a read operation of magnetic memory cells to improve read margin for the magnetic memory cells. The circuit has a trim one-time programmable memory array programmed with offset trim data applied to magnetic memory array sense amplifiers. Sense amplifier trimming circuits receive and decode the trim data to determine offset trim signal magnitude to adjust the reference signal to improve the read margin. The method sets the offset trim level to each increment of the offset trim level. Data is written and read to the magnetic memory array, the number of errors in the array is accumulated for each setting of the offset trim level. The error levels are compared and the appropriate trim level is programmed to the trim memory cells such that a read margin of the sense amplifier is improved.


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