The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2018

Filed:

Sep. 07, 2017
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Naoharu Shimomura, Meguro, JP;

Tomoaki Inokuchi, Yokohama, JP;

Hiroki Noguchi, Yokohama, JP;

Katsuhiko Koui, Yokohama, JP;

Yuuzo Kamiguchi, Yokohama, JP;

Kazutaka Ikegami, Inagi, JP;

Hiroaki Yoda, Kawasaki, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01); G11C 11/15 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1657 (2013.01); G11C 11/15 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01);
Abstract

A magnetic memory includes: a first and second terminals; a conductive layer including first to fourth regions, the first and fourth regions being electrically connected to the first and second terminals respectively; a first magnetoresistive element including: a first and second magnetic layers; a first nonmagnetic layer between the first and second magnetic layers; and a third terminal electrically connected to the first magnetic layer; a second magnetoresistive element including: a third and fourth magnetic layers; a second nonmagnetic layer between the third and fourth magnetic layers; and a fourth terminal electrically connected to the third magnetic layer; and a circuit configured to apply a write current between the first terminal and the second terminal and apply a first and second potentials to the third and fourth terminals respectively to write the first and second magnetoresistive elements, the first and second potentials being different from each other.


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