The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2018

Filed:

Jul. 07, 2015
Applicant:

SK Hynix Inc., Icheon-Si, KR;

Inventors:

Hyung-Suk Lee, Icheon-si, KR;

Jung-Hyun Kang, Icheon-Si, KR;

Sang-Soo Kim, Icheon-Si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 12/0875 (2016.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
G06F 12/0875 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); G06F 2212/452 (2013.01);
Abstract

Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a substrate including a first region and a second region separated from the first region; an interlayer dielectric layer formed over the substrate including first and second regions; a first contact plug located over the first region and formed through the interlayer dielectric layer; a second contact plug located over the second region and formed through the interlayer dielectric layer, wherein the first and the second contact plugs having different structures in the first and second regions, respectively; and a variable resistance element formed over the interlayer dielectric layer over the first region so as to be in contact with the first contact plug.


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