The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2018

Filed:

May. 26, 2017
Applicant:

Nuctech Company Limited, Beijing, CN;

Inventors:

Lan Zhang, Beijing, CN;

Yingshuai Du, Beijing, CN;

Bo Li, Beijing, CN;

Zonggui Wu, Beijing, CN;

Jun Li, Beijing, CN;

Xuepeng Cao, Beijing, CN;

Haifan Hu, Beijing, CN;

Jianping Gu, Beijing, CN;

Guangming Xu, Beijing, CN;

Bicheng Liu, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01T 1/24 (2006.01); H01L 31/02 (2006.01); H05K 1/18 (2006.01); H05K 1/02 (2006.01); H05K 1/11 (2006.01); H01L 31/119 (2006.01); H01L 31/0296 (2006.01);
U.S. Cl.
CPC ...
G01T 1/24 (2013.01); H01L 31/02005 (2013.01); H01L 31/02966 (2013.01); H01L 31/119 (2013.01); H05K 1/028 (2013.01); H05K 1/0233 (2013.01); H05K 1/115 (2013.01); H05K 1/181 (2013.01); H05K 2201/10151 (2013.01); H05K 2201/10287 (2013.01); H05K 2201/10522 (2013.01);
Abstract

The present disclosure provides a semiconductor detector. The semiconductor detector comprises: a detector crystal including a crystal body, an anode and a cathode; a field enhance electrode for applying a voltage to the detector crystal; an insulating material disposed between the field enhanced electrode and a surface of the detector crystal. The semiconductor detector further comprises a field enhanced electrode circuit board having a bottom connection layer in contact with the surface of the detector crystal and a top layer opposite to the bottom connection layer, wherein the top layer is connected to a high voltage input terminal of the semiconductor detector, and an insulating material is provided between the bottom connection layer and the detector surface of the detector crystal.


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