The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2018

Filed:

Jul. 10, 2015
Applicants:

Koninklijke Philips N.v., Eindhoven, NL;

Ioffe Physical Technical Institute, St. Petersburg, RU;

Inventors:

Herfried Karl Wieczorek, Aachen, DE;

Cornelis Reinder Ronda, Aachen, DE;

Hans-Aloys Wischmann, Henstedt-Ulzburg, DE;

Pavel Georgiyevich Baranov, Saint Petersburg, RU;

Gaik Asatrian, Saint Petersburg, RU;

Danil Olegovich Tolmachev, Saint Petersburg, RU;

Assignees:

KONINKLIJKE PHILIPS N.V., Eindhoven, NL;

IOFFE PHYSICAL TECHNICAL INSTITUTE, St. Petersburg, RU;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01T 1/20 (2006.01); G01T 1/202 (2006.01);
U.S. Cl.
CPC ...
G01T 1/202 (2013.01);
Abstract

The invention relates to a characterization apparatus () for characterizing scintillator material () especially for a PET detector. A first radiation source () irradiates the scintillator material with first radiation () having a wavelength being smaller than 450 nm. Then, a second radiation source () irradiates the scintillator material with pulsed second radiation () having a wavelength being larger than 600 nm and having a pulse duration being equal to or smaller than 50 s, wherein a detection device () detects third radiation () from the scintillator material () during and/or after the irradiation by the second radiation. The third radiation depends on the amount of charge carriers trapped at electronic defects of the scintillator material such that it can be used as an indicator for the amount of electronic defects and hence for characterizing the scintillator material. This characterization can be performed relatively fast and in a relatively simple way.


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