The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Mar. 01, 2017
Applicant:
Valeo Vision, Bobigny, FR;
Inventors:
Pierre Albou, Bobigny, FR;
Benoit Reiss, Bobigny, FR;
Assignee:
VALEO VISION, Bobigny, FR;
Primary Examiner:
Int. Cl.
CPC ...
B60Q 1/34 (2006.01); B60Q 1/26 (2006.01); B60Q 1/44 (2006.01); B60Q 1/22 (2006.01); F21S 8/10 (2006.01); F21S 43/13 (2018.01); H01L 31/12 (2006.01); H01L 33/08 (2010.01); H01L 33/24 (2010.01); F21S 43/00 (2018.01); F21S 41/141 (2018.01); F21Y 115/20 (2016.01); F21Y 107/30 (2016.01); F21Y 113/13 (2016.01); B60Q 1/08 (2006.01);
U.S. Cl.
CPC ...
F21S 43/13 (2018.01); B60Q 1/22 (2013.01); B60Q 1/2607 (2013.01); B60Q 1/34 (2013.01); B60Q 1/44 (2013.01); F21S 48/214 (2013.01); H01L 31/125 (2013.01); H01L 33/08 (2013.01); H01L 33/24 (2013.01); B60Q 1/085 (2013.01); B60Q 2400/10 (2013.01); F21S 8/10 (2013.01); F21S 41/141 (2018.01); F21S 43/00 (2018.01); F21S 48/115 (2013.01); F21Y 2107/30 (2016.08); F21Y 2113/13 (2016.08); F21Y 2115/20 (2016.08);
Abstract
A semiconductor light source and driving aid system for a motor vehicle comprising a semiconductor light source. The semiconductor light source includes a plurality of electroluminescent rods of submillimetric dimensions. At least certain rods are electrically interconnected in a first assembly dedicated to an emission of a light beam at a first wavelength, and other rods are electrically interconnected in a second assembly dedicated to an emission of a light beam at a second wavelength different from the first wavelength, the first and the second assemblies forming two selectively activable emission areas.