The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Feb. 28, 2017
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
National University Corporation Kanazawa University;
Hitoshi Noguchi, Takasaki, JP;
Shozo Shirai, Takasaki, JP;
Toshiharu Makino, Tsukuba, JP;
Masahiko Ogura, Tsukuba, JP;
Hiromitsu Kato, Tsukuba, JP;
Hiroyuki Kawashima, Tsukuba, JP;
Daisuke Kuwabara, Tsukuba, JP;
Satoshi Yamasaki, Tsukuba, JP;
Daisuke Takeuchi, Tsukuba, JP;
Norio Tokuda, Kanazawa, JP;
Takao Inokuma, Kanazawa, JP;
Tsubasa Matsumoto, Kanazawa, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo, JP;
NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY, Kanazawa-shi, JP;
Abstract
The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step. There can be provided a method for manufacturing a diamond substrate with few dislocation defects, in which generation of abnormal growth particles are suppressed.