The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 09, 2018

Filed:

Jun. 26, 2014
Applicants:

Alcatel Lucent Usa, Inc., Murray Hill, NJ (US);

Alcatel-lucent Canada, Inc., Ottawa, CA;

Inventors:

Po Dong, Morganville, NJ (US);

Young-Kai Chen, Berkeley Heights, NJ (US);

Assignee:

Alcatel-Lucent USA Inc., Murray Hill, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/026 (2006.01); H01S 5/10 (2006.01); H01S 5/02 (2006.01); H01S 3/063 (2006.01); H01S 5/30 (2006.01);
U.S. Cl.
CPC ...
H01S 5/026 (2013.01); H01S 3/0637 (2013.01); H01S 5/021 (2013.01); H01S 5/0215 (2013.01); H01S 5/1014 (2013.01); H01S 5/3013 (2013.01);
Abstract

Various exemplary embodiments relate to an apparatus including: a first substrate including a planar dielectric layer on a semiconducting layer, and a silicon layer located directly on a planar surface of the dielectric layer, adjacent first and second segments of the silicon layer being optically end-coupled, the first segment being thicker than the second segment; and a second substrate including a III-V semiconductor layer segment on a top surface thereof, the first and second substrates being bonded together such that the III-V semiconductor layer segment is in direct contact with a portion of the first segment of the silicon layer.


Find Patent Forward Citations

Loading…