The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Dec. 26, 2016
International Business Machines Corporation, Armonk, NY (US);
Ali Afzali-Ardakani, Ossining, NY (US);
Joel P. de Souza, Putnam Valley, NY (US);
Bahman Hekmatshoartabari, White Plains, NY (US);
Daniel M. Kuchta, Patterson, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Silicon-based or other electronic circuitry is dissolved or otherwise disabled by reactive materials within a semiconductor chip should the chip or a device containing the chip be subjected to tampering. Triggering circuits containing normally-OFF heterojunction field-effect photo-transistors are configured to cause reactions of the reactive materials within the chips upon exposure to light. The normally-OFF heterojunction field-effect photo-transistors can be fabricated during back-end-of-line processing through the use of polysilicon channel material, amorphous hydrogenated silicon gate contacts, hydrogenated crystalline silicon source/drain contacts, or other materials that allow processing at low temperatures.