The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Feb. 20, 2018
Applicant:
Hrl Laboratories, Llc, Malibu, CA (US);
Inventors:
Jeong-Sun Moon, Moorpark, CA (US);
Hwa Chang Seo, Torrance, CA (US);
Assignee:
HRL Laboratories, LLC, Malibu, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/109 (2006.01); H01L 31/02 (2006.01); H01L 45/00 (2006.01); H01L 31/18 (2006.01); H01L 31/0216 (2014.01); H01L 31/0336 (2006.01); H01L 31/0272 (2006.01);
U.S. Cl.
CPC ...
H01L 31/109 (2013.01); H01L 31/02005 (2013.01); H01L 31/0272 (2013.01); H01L 31/02161 (2013.01); H01L 31/0336 (2013.01); H01L 31/1892 (2013.01); H01L 45/06 (2013.01); H01L 45/144 (2013.01);
Abstract
A photodetector comprising a region of a p-type phase-change chalcogenide material forming a heterojunction with a region of n-type Silicon; wherein the p-type phase-change chalcogenide material comprises one of GeTe and SbTe.