The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Jan. 26, 2015
Flisom Ag, Dubendorf, CH;
Roger Ziltener, Sursee, CH;
Thomas Netter, Winterthur, CH;
FLISOM AG, Duebendorf, CH;
Abstract
A method for vias and monolithic interconnects in thin-film optoelectronic devices () wherein at least one line segment via hole () is formed by laser drilling and passes through front-contact layers () and semiconductive active layer (), and wherein laser drilling causes forming a CIGS-type wall () of electrically conductive permanently metalized copper-rich CIGS-type alloy at the inner surface () of the via hole, thereby forming a conductive path between at least a portion of front-contact and a portion of back-contact layers (), forming a bump-shaped raised portion () at the surface of the front-contact layer, forming a raised portion () of the back-contact layer, and optionally forming a raised portion of copper-rich CIGS-type alloy () covering a portion of the front-contact layer (). A thin-film CIGS device comprises at least one line segment via hole obtainable by the method.