The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Jan. 14, 2018
Nuvoton Technology Corporation, Hsinchu, TW;
Nuvoton Technology Corporation, Hsinchu, TW;
Abstract
A semiconductor device including a substrate, an isolation structure, a diode element, and a first metal layer is provided. The isolation structure is located in the substrate. The diode element is located on the isolation structure. The diode element includes a p-type doped region, an n-type doped region, and an intrinsic region, and the intrinsic region is located between the p-type doped region and the n-type doped region. The p-type doped region and the n-type doped region located on two sides of the diode element respectively form ohmic contacts. The first metal layer and the intrinsic region of the diode element are electrically connected and form a Schottky contact, so as to constitute at least one Schottky barrier diode.