The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Mar. 08, 2018
Applicant:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Inventors:
Young Bae Kim, Cheongju-si, KR;
Kwang Il Kim, Cheongju-si, KR;
Assignee:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/808 (2006.01); H01L 21/22 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 21/38 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7832 (2013.01); H01L 29/0649 (2013.01); H01L 29/0688 (2013.01); H01L 29/1058 (2013.01); H01L 29/1066 (2013.01); H01L 29/402 (2013.01); H01L 29/41758 (2013.01); H01L 29/66901 (2013.01); H01L 29/808 (2013.01);
Abstract
The present examples relate to a junction field effect transistor (JFET) that shares a drain with a high voltage field effect transistor. The present examples are able to control a pinch-off feature of the junction transistor while also maintaining electric features of the high voltage transistor by forming a groove on a lower part of a first conductivity type deep-well region located on a channel region of the junction transistor in a channel width direction.