The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
May. 11, 2017
Hyundai Autron Co., Ltd., Seongnam-si, KR;
Tae Youp Kim, Seongnam-si, KR;
Hyuk Woo, Seongnam-si, KR;
Young Joon Kim, Seongnam-si, KR;
Tae Young Park, Seongnam-si, KR;
Han Sin Cho, Seongnam-si, KR;
Yoon Chul Choi, Seongnam-si, KR;
Hyundai Autron Co., Ltd., Seongnam-si, KR;
Abstract
Provided are a semiconductor device, the semiconductor device comprise, a substrate which comprises a first surface and a second surface facing the first surface, an epitaxial layer which is formed on the first surface of the substrate and has a first conductivity type, a base region which is formed in the epitaxial layer and has a second conductivity type different from the first conductivity type, a source region which is formed in the base region and has the first conductivity type, a channel region which is formed in the base region to bc separated from the source region and has the first conductivity type and a barrier region which is formed between the source region and the channel region and has the second conductivity type.