The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Sep. 18, 2014
Boe Technology Group Co., Ltd., Beijing, CN;
Beijing Boe Display Technology Co., Ltd., Beijing, CN;
Kiyong Kim, Beijing, CN;
Liping Luo, Beijing, CN;
Chaoqin Xu, Beijing, CN;
Jeong Hun Rhee, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
BEIJING BOE DISPLAY TECHNOLOGY CO., LTD., Beijing, CN;
Abstract
Embodiments of the present disclosure disclose a thin film transistor, a fabrication method thereof, a repair method thereof, and an array substrate. The thin film transistor comprises a gate electrode (), a gate insulating layer (), an active layer (), a source electrode () and a drain electrode (). The source electrode () comprises a first source electrode portion () and a second source electrode portion () independent from each other, the first source electrode portion () and the second source electrode portion () are electrically connected with the active layer (), respectively; and/or, the drain electrode () comprises a first drain electrode portion () and a second drain electrode portion () independent from each other, the first drain electrode portion () and the second drain electrode portion () are electrically connected with the active layer (), respectively.