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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10096676 B1

PDFFull Text
Expired
Date of Patent:
Oct. 09, 2018

Filed:

Jul. 18, 2017

Semiconductor device and manufacturing method thereof

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Hisao Inomata, Kodaira, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

McGinn IP Law Group, PLLC.

Primary Examiner:

David Vu

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 21/04 (2006.01); H01L 21/265 (2006.01); H01L 21/28 (2006.01); H01L 21/3215 (2006.01); H01L 21/3205 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 21/266 (2006.01); H01L 29/808 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1058 (2013.01); H01L 21/047 (2013.01); H01L 21/049 (2013.01); H01L 21/266 (2013.01); H01L 21/26546 (2013.01); H01L 21/26586 (2013.01); H01L 21/28264 (2013.01); H01L 21/3215 (2013.01); H01L 21/32055 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/66068 (2013.01); H01L 29/66909 (2013.01); H01L 29/66924 (2013.01); H01L 29/8083 (2013.01);
Abstract

A semiconductor device includes: a first-conductivity-type semiconductor substrate serving as a drain layer; a first-conductivity-type epitaxial layer formed on the semiconductor substrate; a first-conductivity-type source layer formed in a surface part of the epitaxial layer; two second-conductivity-type gate layers formed in the surface part of the epitaxial layer so as to sandwich the source layer; a first-conductivity-type channel forming layer formed so as to be sandwiched between the two gate layers, the first-conductivity-type channel forming layer being formed on an inner side of the source layer in the epitaxial layer; and an electrode connected to one of the drain layer, the source layer, and the gate layer. In the channel forming layer, two first-conductivity-type impurity layers each having a substantially predetermined width are formed adjacent to each other in a direction crossing a channel.

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